switchmode series npn silicon power darlington transistors with base-emitter speedup diode the but33 darlington transistor is designed for highvoltage, highspeed, power switching in inductive circuits where fall time is critical. they are particularly suited for line operated switchmode applications such as: ? ac and dc motor controls ? switching regulators ? inverters ? solenoid and relay drivers ? fast turn off times 800 ns inductive fall time at 25 c (typ) 2.0 m s inductive storage time at 25 c (typ) ? operating temperature range 65 to 200 c ????????????????????????????????? ????????????????????????????????? maximum ratings ????????????????? ????????????????? rating ??????? ??????? symbol ???????? ???????? but33 ???? ???? unit ????????????????? ????????????????? collectoremitter voltage ??????? ??????? v ceo(sus) ???????? ???????? 400 ???? ???? vdc ????????????????? ????????????????? collectoremitter voltage ??????? ??????? v cev ???????? ???????? 600 ???? ???? vdc ????????????????? ????????????????? emitter base voltage ??????? ??????? v eb ???????? ???????? 10 ???? ???? vdc ????????????????? ? ??????????????? ? ????????????????? collector current e continuous collector current e peak (1) ??????? ? ????? ? ??????? i c i cm ???????? ? ?????? ? ???????? 56 75 ???? ? ?? ? ???? adc ????????????????? ????????????????? base current e continuous base current e peak (1) ??????? ??????? i b i bm ???????? ???????? 12 15 ???? ???? adc ????????????????? ? ??????????????? ? ????????????????? free wheel diode forward current e continuous free wheel diode forward current e peak ??????? ? ????? ? ??????? i f i fm ???????? ? ?????? ? ???????? 56 75 ???? ? ?? ? ???? adc ????????????????? ? ??????????????? ? ? ??????????????? ? ????????????????? total power dissipation @ t c = 25 c @ t c = 100 c derate above 25 c ??????? ? ????? ? ? ????? ? ??????? p d ???????? ? ?????? ? ? ?????? ? ???????? 250 140 ???? ? ?? ? ? ?? ? ???? watts w/ c ????????????????? ????????????????? operating and storage junction temperature range ??????? ??????? t j , t stg ???????? ???????? 65 to +200 ???? ???? c ????????????????????????????????? ????????????????????????????????? thermal characteristics ????????????????? ????????????????? characteristic ??????? ??????? symbol ???????? ???????? max ???? ???? unit ????????????????? ????????????????? thermal resistance, junction to case ??????? ??????? r q jc ???????? ???????? 0.7 ???? ???? c/w ????????????????? ????????????????? maximum lead temperature for soldering purpose 1/8 from case for 5 seconds ??????? ??????? t l ???????? ???????? 275 ???? ???? c (1) pulse test: pulse width = 5 ms, duty cycle 10%. on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 9 1 publication order number: but33/d but33 56 amperes npn silicon power darlington transistor 600 volts 250 watts case 197a05 to204ae (to3) 100 16
but33 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ????? ????? symbol ???? ???? min ??? ??? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ??????????????????? ? ????????????????? ? ??????????????????? collectoremitter sustaining voltage (table 1) (i c = 100 ma, i b = 0) ????? ? ??? ? ????? v ceo(sus) ???? ? ?? ? ???? 400 ??? ? ? ? ??? e ???? ? ?? ? ???? e ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? collector cutoff current (v cev = rated value, v be(off) = 1.5 vdc) (v cev = rated value, v be(off) = 1.5 vdc, t c = 100 c) ????? ? ??? ? ????? i cev ???? ? ?? ? ???? e e ??? ? ? ? ??? e e ???? ? ?? ? ???? 0.2 4.0 ??? ? ? ? ??? madc ??????????????????? ? ????????????????? ? ??????????????????? emitter cutoff current (v eb = 20 v, i c = 0) ????? ? ??? ? ????? i ebo ???? ? ?? ? ???? e ??? ? ? ? ??? e ???? ? ?? ? ???? 350 ??? ? ? ? ??? madc ????????????????????????????????? ????????????????????????????????? second breakdown ??????????????????? ??????????????????? second breakdown collector current with base forward biased ????? ????? i s/b ???? ???? ?????? ?????? see figure 16 ??? ??? ??????????????????? ??????????????????? clamped inductive soa with base reverse biased ????? ????? rbsoa ???? ???? ?????? ?????? see figure 17 ??? ??? ????????????????????????????????? ????????????????????????????????? on characteristics (1) ??????????????????? ? ????????????????? ? ??????????????????? dc current gain (i c = 20 a, v ce = 5 v) (i c = 36 a, v ce = 5 v) ????? ? ??? ? ????? h fe ???? ? ?? ? ???? 30 20 ??? ? ? ? ??? e e ???? ? ?? ? ???? e e ??? ? ? ? ??? ??????????????????? ? ????????????????? ? ? ????????????????? ? ? ????????????????? ? ??????????????????? collectoremitter saturation voltage (i c = 20 a, i b = 1 a) (i c = 36 a, i b = 3.6 a) (i c = 44 a, i b = 4.4 a) (i c = 56 a, i b = 11.2 a) ????? ? ??? ? ? ??? ? ? ??? ? ????? v ce(sat) ???? ? ?? ? ? ?? ? ? ?? ? ???? e e e e ??? ? ? ? ? ? ? ? ? ? ??? e e e e ???? ? ?? ? ? ?? ? ? ?? ? ???? 2.0 2.5 3.0 5.0 ??? ? ? ? ? ? ? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? baseemitter saturation voltage (i c = 20 a, i b = 1 a) (i c = 36 a, i b = 3.6 a) (i c = 44 a, i b = 4.4 a) ????? ? ??? ? ? ??? ? ????? v be(sat) ???? ? ?? ? ? ?? ? ???? e e e ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? 2.5 2.9 3.3 ??? ? ? ? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? diode forward voltage (i f = 44 a) ????? ? ??? ? ????? v f ???? ? ?? ? ???? e ??? ? ? ? ??? e ???? ? ?? ? ???? 4.0 ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? switching characteristics inductive load clamped (table 1) ?????? ?????? storage time ?????????????? ?????????????? t c = 25 ci c = 36 a ????? ????? t s ???? ???? e ??? ??? 2.0 ???? ???? 3.3 ??? ??? m s ?????? ?????? fall time ?????????????? ?????????????? i b = 3.6 a ????? ????? t f ???? ???? e ??? ??? 0.8 ???? ???? 1.6 ??? ??? m s ?????? ?????? storage time ?????????????? ?????????????? see table 1 ????? ????? t s ???? ???? e ??? ??? 2.2 ???? ???? e ??? ??? m s ?????? ?????? fall time ?????????????? ?????????????? see table 1 t c = 100 cv be(off) = 5 v ????? ????? t f ???? ???? e ??? ??? 0.8 ???? ???? e ??? ??? m s (1) pulse test: pw = 300 m s, duty cycle 2%.
but33 http://onsemi.com 3 typical characteristics v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) 3.2 1 i c , collector current (amps) 23 710 50 2.8 2.5 2.2 1.9 2.5 i c , collector current (amps) 2.2 1.9 1.6 1.3 1.0 0.7 0.4 t c = 25 c i c /i b = 10 1.6 1.3 20 i c = 40 a 400 1 figure 1. dc current gain i c , collector current (amps) 1 2 3 4 6 10 20 30 40 60 100 30 20 10 figure 2. collector saturation region 0.1 i b , base current (amps) 0 0.2 0.3 0.5 1 4 3 2 1 200 50 h fe , dc current gain 5 3 2 t c = 25 c v ce = 5.0 v i c = 20 a t c = 25 c 23 5 710 figure 3. collectoremitter saturation voltage 30 5 1 2 3 7 10 50 20 30 5 t c = 25 c i c /i b = 10 v be , base-emitter voltage (volts) 1.0 figure 4. baseemitter voltage t, time (ms) 1 0.01 0.01 0.5 0.2 0.1 0.05 0.02 0.05 1 2 5 10 20 50 100 200 500 r q jc (t) = r(t) r q jc r q jc (t) = 1.17 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.2 0.05 0.02 0.01 single pulse 0.1 0.7 0.3 0.07 0.03 0.02 0.1 0.5 0.2 resistance (normalized) 1000 figure 5. thermal response 0.03 0.3 3 30 300
but33 http://onsemi.com 4 table 1. test conditions for dynamic performance v ceo(sus) rbsoa and inductive switching test circuit for freewheel diode input conditions circuit values test circuits pw varied to attain i c = 100 ma l coil = 10 mh, v cc = 10 v r coil = 0.7 w v clamp = v ceo(sus) l coil = 180 m h r coil = 0.05 w v cc = 10 v inductive test circuit t 1 adjusted to obtain i c t 1 l coil (i cm ) v cc t 2 l coil (i cm ) v clamp test equipment scope e tektronix 475 or equivalent output waveforms 1 input 2 r coil l coil v cc v clamp rs = 0.1 w 1n4937 or equivalent tut see above for detailed conditions 20 w 1 5 v 0 2 220 100 680 pf 100 pulses d = 3% 33 2 w 33 2 w 160 d1 22 m f d3 22 680 pf mm3735 1n4934 d1d2d3d4 2n3763 160 680 pf 22 d4 22 m f d3 2n6438 +10 v mr854 1 m f 2n6339 mr854 i b1 adjust dt b adjust driver + - v d i d v d i d 510 av up to 50 v cronetics pg130 up to 50 v 5 m s dt i b2 adjust v cc i cm v cem i c v ce t 1 t f t t f clamped t 2 time v clamp t 1%
but33 http://onsemi.com 5 ib2/ib1 10 b f , forced gain 8 6 5 4 3 2 1 15 1 figure 6. fall time versus ib2/ib1 ib2/ib1 0.1 23 45 67 8910 5 2 1 figure 7. turnoff time versus i c 5 1 i c , collector current (amps) 0.1 23 5710 4 3 2 1 10 3 i c = 50 a 0.5 0.3 0.2 t c = 25 c i c /i b = 5 20 30 50 figure 8. storage time versus forced gain figure 9. storage time versus ib2/ib1 40 c i c = 25 a 1 2 34 5 67 8 9 10 1 23 45 6 7 8 910 i c = 25 a i c = 50 a t c = 25 c v be(off) = 5 v t, time (s) m t, time (s) m t, time (s) m t, time (s) m 0.5 0.3 0.2 i c /i b = 10 10 v t c = 25 c i c /i b = 20 t f i c = 20 a v be(off) = 5 v s t f = 200 ns s t s = 400 ns t s 10 v i c = 25 a i c = 50 a 10 8 6 5 4 3 2 1 t c = 25 c i c /i b = 5 v be(off) = 5 v i c = 10 a
but33 http://onsemi.com 6 freewheel diode characteristics t m fr , forward recovery time (s) t m rr , reverse recovery time (s) i e , emitter current (amps) figure 10. free wheel diode measurements figure 11. forward voltage 0 v ec , emitter collector voltage (volts) 0 12 34 5 10 0 figure 12. forward modulation voltage i e , emitter current (amps) 10 30 0 figure 13. peak reverse recovery current 30 25 15 10 20 5 50 i e , emitter curremt (amps) 20 40 0 30 50 40 10 20 20 50 40 30 0 figure 14. forward recovery time i e , emitter current (amps) 0.8 10 20 40 50 2.0 1.6 1.4 1.2 figure 15. reverse recovery time 0 i e , emitter current (amps) 0.3 10 20 30 40 50 3 2 2.2 1.8 1.0 30 15 10 7 i rm , peak reverse recovery current (amps) v dyn , forward modulation voltage (volts) - s + s 0 50 40 20 30 10 5 1 0.7 0.5 40 c i d 1 0 v d dyn 10 (vdyn vfm) vfm tfr i ifm irm t rr t 25 irm di/dt = 25 a/ m s t c = 25 c t c = 25 c t c = 25 c t c = 25 c t c = 25 c
but33 http://onsemi.com 7 the safe operating area figures shown in figures 16 and 17 are specified for the devices under the test conditioned shown. 1 figure 16. safe operating area v ce , collector-emitter voltage (volts) 530 0.1 60 30 3.0 1.0 10 0.5 1000 10 100 0 figure 17. reverse bias safe operating area v ce , collector-emitter voltage (volts) 0 200 400 40 20 60 600 t c = 25 c i c /i b = 10 i c , collector current (amps) 0.3 300 dc 1 ms 10 m s v be(off) = 5 v i cm , peak collector current (amps) t c = 25 c 100 m s safe operating area information forward bias there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subject to greater dissipation than the curves indicate. the data of figure 16 is based on t c = 25_c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when t c y 25_c. second breakdown limitations do not derate the same as thermal limitations. allowable current at the voltages shown on figure 16 may be found at any case temperature by using the appropriate curve on figure 18. t j(pk) may be calculated from the data in figure 5. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. reverse bias for inductive loads, high voltage and high current must be sustained simultaneously during turnoff, in most cases, with the base to emitter junction reverse biased. under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. this can be accomplished by several means such as active clamping, rc snubbing, load line shaping, etc. the safe level for these devices is specified as reverse bias safe operating area and represents the voltage current condition allowable during reverse biased turnoff. this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode figure 17 gives the rbsoa characteristics. 0 figure 18. power derating i c , case temperature ( c) 0 40 80 80 40 100 120 power derating (factor) 160 200 60 20 second breakdown derating thermal derating
but33 http://onsemi.com 8 package dimensions case 197a05 issue j to204 ae (to3) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. dim min max min max millimeters inches a 1.530 ref 38.86 ref b 0.990 1.050 25.15 26.67 c 0.250 0.335 6.35 8.51 d 0.057 0.063 1.45 1.60 e 0.060 0.070 1.53 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n 0.760 0.830 19.31 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k t seating plane 2 pl d m q m 0.30 (0.012) y m t m y m 0.25 (0.010) t q y 2 1 l g b v h u on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. but33/d switchmode is a trademark of on semiconductor, inc. north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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